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CYStech Electronics Corp.
General Purpose NPN Epitaxial Planar Transistor
Spec. No. : C216N3 Issued Date : 2003.10.07
Revised Date : Page No. : 1/4
BTNA06N3
Description
* The BTNA06N3 is designed for use in general purpose amplification and switching application. * High current , IC = 0.5A * Low VCE(sat) , VCE(sat) = 0.25V(typ.) at IC/IB = 100mA/10mA * Complementary to BTPA56N3.
Symbol
BTNA06N3
Outline
SOT-23
BBase CCollector EEmitter
Absolute Maximum Ratings (Ta=25C)
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC Pd Tj Tstg Limits 80 80 4 500 225 150 -55~+150 Unit V V V mA mW C C
BTNA06N3
CYStek Product Specification
CYStech Electronics Corp.
Characteristics (Ta=25C)
Symbol BVCBO BVCEO BVEBO ICBO ICEO *VCE(sat) *VBE(on) *hFE1 *hFE2 fT Min. 80 80 4 50 50 100 Typ. Max. 100 100 0.25 1.2 Unit V V V nA nA V V MHz
Spec. No. : C216N3 Issued Date : 2003.10.07
Revised Date : Page No. : 2/4
Test Conditions IC=100A IC=1mA IE=100A VCB=80V VCE=60V IC=100mA, IB=10mA VCE=1V, IC=100mA VCE=1V, IC=10mA VCE=1V, IC=100mA VCE=2V, IC=10mA, f=100MHz
*Pulse Test: Pulse Width 380s, Duty Cycle2%
BTNA06N3
CYStek Product Specification
CYStech Electronics Corp.
Characteristic Curves
Current Gain vs Collector Current
1000 Saturation Voltage---(mV)
VCE = 5V
Spec. No. : C216N3 Issued Date : 2003.10.07
Revised Date : Page No. : 3/4
Saturation Voltage vs Collector Current
1000
Current Gain---HFE
100
VCE = 2V
100
VCE(SAT) @IC=20IB
VCE = 1V
VCE(SAT) @IC=10IB
10 1 10 100 Collector Current---IC(mA) 1000
10 1 10 100 Collector Current---IC(mA) 1000
Saturation Voltage vs Collector Current
1000 Saturation Voltage---(mV) 1000
On Voltage vs Collector Current
On Voltage---(mV)
VBE(SAT) @IC=10IB
VBE(ON) @VCE=1V
100 1 10 100 1000 Collector Current---IC(mA)
100 1 10 100 1000 Collector Current---IC(mA)
Power Derating Curve
250 Power Dissipation---PD(mW) 200 150 100 50 0 0 50 100 150 200 Ambient Temperature---TA()
BTNA06N3
CYStek Product Specification
CYStech Electronics Corp.
SOT-23 Dimension
A L
Spec. No. : C216N3 Issued Date : 2003.10.07
Revised Date : Page No. : 4/4
Marking:
3 B 1 2 S
TE 1G
V
G 3-Lead SOT-23 Plastic Surface Mounted Package CYStek Package Code: N3 Style: Pin 1.Base 2.Emitter 3.Collector D H K J
C
*: Typical
DIM A B C D G H
Inches Min. Max. 0.1102 0.1204 0.0472 0.0630 0.0335 0.0512 0.0118 0.0197 0.0669 0.0910 0.0005 0.0040
Millimeters Min. Max. 2.80 3.04 1.20 1.60 0.89 1.30 0.30 0.50 1.70 2.30 0.013 0.10
DIM J K L S V
Inches Min. Max. 0.0034 0.0070 0.0128 0.0266 0.0335 0.0453 0.0830 0.1083 0.0098 0.0256
Millimeters Min. Max. 0.085 0.177 0.32 0.67 0.85 1.15 2.10 2.75 0.25 0.65
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
* Lead: 42 Alloy ; solder plating * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
* All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. * CYStek reserves the right to make changes to its products without notice. * CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTNA06N3
CYStek Product Specification

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